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Amorphous W-S-N thin films: The atomic structure behind ultra-low friction

机译:非晶W-S-N薄膜:超低摩擦背后的原子结构

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摘要

Amorphous W-S-N in the form of thin films has been identified experimentally as an ultra-low friction material, enabling easy sliding by the formation of a WS2 tribofilm. However, the atomic-level structure and bonding arrangements in amorphous W-S-N, which give such optimum conditions for WS2 formation and ultra-low friction, are not known. In this study, amorphous thin films with up to 37 at.% N are deposited, and experimental as well as state-of-the-art ab initio techniques are employed to reveal the complex structure of W-S-N at the atomic level. Excellent agreement between experimental and calculated coordination numbers and bond distances is demonstrated. Furthermore, the simulated structures are found to contain N bonded in molecular form, i.e. N-2, which is experimentally confirmed by near edge X-ray absorption fine structure and X-ray photoelectron spectroscopy analysis. Such N-2 units are located in cages in the material, where they are coordinated mainly by S atoms. Thus this ultra-low friction material is shown to be a complex amorphous network of W, S and N atoms, with easy access to W and S for continuous formation of WS2 in the contact region, and with the possibility of swift removal of excess nitrogen present as N-2 molecules. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
机译:薄膜形式的无定形W-S-N在实验上已被确定为超低摩擦材料,通过形成WS2摩擦膜可轻松滑动。但是,未知的W-S-N原子级结构和键排列为WS2的形成和超低摩擦提供了最佳条件。在这项研究中,沉积了氮含量高达37 at。%的非晶薄膜,并采用了实验方法和最先进的从头开始技术来揭示W-S-N在原子水平上的复杂结构。实验和计算的配位数和键距之间表现出极好的一致性。此外,发现模拟结构包含以分子形式键合的N,即N-2,这通过近边缘X射线吸收精细结构和X射线光电子能谱分析通过实验证实。此类N-2单元位于材料的笼中,主要由S原子配位。因此,该超低摩擦材料显示为W,S和N原子的复杂非晶态网络,易于接触W和S以在接触区域连续形成WS2,并且有可能迅速去除多余的氮以N-2分子形式存在。 (C)2014 Acta Materialia Inc.,由Elsevier Ltd.发行。保留所有权利。

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